10v drive nch mosfet R6004CND ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) low on-resistance. 2) high-speed switching. 3) wide soa. 4) drive circuits can be simple. 5) parallel use is easy. ? application switching ? packaging specifications ? inner circuit package taping code tl basic ordering unit (pieces) 2500 R6004CND ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 600 v gate-source voltage v gss ? 25 v continuous i d ? 4a pulsed i dp ? 16 a continuous i s 4a pulsed i sp 16 a avalanche current i as 2a avalanche energy e as 1.1 mj power dissipation p d 40 w channel temperature t ch 150 ? c range of storage temperature t stg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 l 500 ? h, v dd =50v, r g =25 ? , t ch =25 ? c *3 limited only by maximum temperature allowed. *4 t c =25 ? c ? thermal resistance symbol limits unit channel to case r th (ch-c) 3.13 ? c / w parameter type source current (body diode) drain current parameter *4 *1 *1 cpt3 (sc-63) 6.5 2.3 (2) (3) 0.65 0.9 (1) 0.75 2.30.9 5.1 1.5 5.5 2.3 0.5 1.0 0.5 9.5 2.5 0.8min. 1.5 (1) gate (2) drain (3) source ? 1 esd protection diode ? 2 body diode *2 *2 *3 ?2 ?1 (1) (2) (3) (1) gate (2) drain (3) source 1/5 2011.10 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
R6004CND ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 25v, v ds =0v drain-source breakdown voltage v (br)dss 600 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss - - 100 ? av ds =600v, v gs =0v gate threshold voltage v gs (th) 2.5 - 4.5 v v ds =10v, i d =1ma forward transfer admittance l y fs l 1.2 - - s v ds =10v, i d =2a input capacitance c iss - 280 - pf v ds =25v output capacitance c oss - 222 - pf v gs =0v reverse transfer capacitance c rss - 15 - pf f=1mhz turn-on delay time t d(on) - 23 - ns v dd 300v, i d =2a rise time t r - 28 - ns v gs =10v turn-off delay time t d(off) - 44 - ns r l =150 ? fall time t f - 39 - ns r g =10 ? total gate charge q g - 11 - nc v dd 300v gate-source charge q gs -3-nci d =4a gate-drain charge q gd -5-ncv gs =10v *pulsed ? body diode characteristics (source-drain) symbol min. typ. max. unit forward voltage v sd - - 1.5 v i s =4a, v gs =0v *pulsed conditions ? parameter static drain-source on-state resistance r ds (on) i d =2a, v gs =10v - 1.4 1.8 parameter conditions * * * * * * * * * * 2/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
R6004CND ? electrical characteristic curves 0.01 0.1 1 10 0.0 0.5 1.0 1.5 v gs = 0v pulsed t a =125 t a = 75 t a = 25 t a = - 25 0 1 2 3 4 5 -50 0 50 100 150 v gs = 10v pulsed i d = 2.0a i d = 4.0a 0 0.1 0.2 0.3 0.4 0.5 0 0.2 0.4 0.6 0.8 1 drain current : i d [a] drain - source voltage : v ds [v] fig.1 typical output characteristics ( ) v gs = 10.0 v v gs =6.0v v gs =7.0v v gs =5.0v v gs =4.5v v gs =8.0v v gs =6.5v t a =25 pulsed 0 1 2 3 4 0 1 2 3 4 5 6 7 8 9 10 drain current : i d [a] drain - source voltage : v ds [v] fig.2 typical output characteristics ( ) v gs =10.0v v gs =5.0v v gs =6.0v v gs =4.5v v gs =7.0v v gs =8.0v v gs =6.5v t a =25 pulsed 0.001 0.01 0.1 1 10 100 0 2 4 6 8 10 v ds = 10v pulsed t a =125 t a = 75 t a = 25 t a = - 25 fig.3 typical transfer characteristics gate - source voltage : v gs (v) drain current : i d (a) fig.4 gate threshold voltage vs. channel temperature 0 1 2 3 4 5 6 -50 0 50 100 150 v ds = 10v i d = 1ma channel temperature: t ch ( ) gate threshold voltage: v gs(th) (v) fig.5 static drain - source on - state resistance vs. drain current drain current : i d (a) static drain - source on - state resistance : r ds(on) ( ) 0 0.5 1 1.5 2 2.5 3 3.5 4 0 5 10 15 i d = 2.0a i d = 4.0a t a =25 pulsed fig.6 static drain - source on - state resistance vs. gate source gate - source voltage : v gs (v) static drain - source on - state resistance : r ds(on) ( ) fig.7 static drain - source on - state resistance vs. channel temperature channel temperature: t ch ( ) static drain - source on - state resistance : r ds(on) ( ) 0.001 0.01 0.1 1 10 100 0.01 0.1 1 10 v ds = 10v pulsed t a =125 t a = 75 t a = 25 t a = - 25 fig.8 forward transfer admittance vs. drain current drain current : i d (a) forward transfer admittance : |yfs| (s) fig.9 source current vs. sourse - drain voltage source - drain voltage : v sd (v) source current : i s (a) 0.01 0.1 1 10 100 0.1 1 10 v gs = 10v pulsed t a =125 t a = 75 t a = 25 t a = - 25 3/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
R6004CND 1 10 100 1000 10000 0.01 0.1 1 10 t r t f t d(on) t d(off) t a = 25 v dd = 300v v gs = 10v r g = 10 pulsed 10 100 1000 10000 0 1 10 t a = 25 di / dt= 100a / s v gs = 0v pulsed 1 10 100 1000 10000 0.01 0.1 1 10 100 1000 c iss c oss c rss t a = 25 f= 1mhz v gs = 0v fig.10 typical capacitance vs. drain - source voltage drain - source voltage : v ds (v) capacitance : c (pf) 0 5 10 15 0 5 10 15 t a = 25 v dd = 300v i d = 4a r g = 10 pulsed fig.11 dynamic input characteristics total gate charge : q g (nc) gate - source voltage : v gs (v) fig.12 reverse recovery time vs.source current source current : i s (a) reverse recovery time: t rr (ns) fig.13 switching characteristics drain current : i d (a) switching time : t (ns) 4/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
R6004CND ? measurement circuits f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) fig.2-2 gate charge waveform v g v gs charge q g q gs q gd fig.3-1 avalanche measurement circuit v gs r g v ds d.u.t. i as l v dd fig.3-2 avalanche waveform i as v dd v (br)dss i as 2 l e as = v (br)dss - v dd v (br)dss 1 2 f ig.2-1 gate charge measurement circuit v gs i g(const.) r g v d s d.u.t. i d r l v dd 5/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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